unisonic technologies co., ltd UF7476 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-a70.b n-channel power mosfet ? description the utc UF7476 is an n-channel power mosfet, it uses utc?s advanced technology to pr ovide the customers with high switching speed and minimum on-state resistance. the utc UF7476 is suitable for various applications such as power management for netcom, computing and portable applications, etc. ? features * r ds(on) < 8.0m ? @ v gs =4.5v * ultra-low gate impedance * high switching speed sop-8 ? ordering information ordering number package pin assignment packing 1 2 3 4 5 6 7 8 UF7476g-s08-r sop-8 s s s g d d d d tape reel note: pin assignment: g: gate d: drain s: source
UF7476 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-a70.b ? marking ? pin configuration
UF7476 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-a70.b ? absolute maximum rating parameter symbol ratings unit drain-source voltage v dss 12 v gate-source voltage v gss 12 v drain current continuous t a =25c i d 15 a t a =70c 12 a pulsed (note 1) i dm 120 a avalanche current (note 1) i ar 12 a avalanche energy (note 3) e as 60 mj power dissipation (note 4) t a =25c p d 2.5 w linear derating factor 0.02 w/c junction temperature t j +150 c storage temperature range t stg -55~+150 c notes: 1. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. starting t j = 25c, l=0.8mh, i as =12a, r g = 25 ? 4. when mounted on 1 inch square copper board ? thermal resistance parameter symbol ratings unit junction to ambient (note 4) ja 75 c/w ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 12 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =1ma 0.014 v/c drain-source leakage current i dss v ds =9.6v, v gs =0v 100 a v ds =9.6v, v gs =0v, t j =125c 250 a gate-source leakage current forward i gss v gs =12v, v ds =0v 200 na reverse v gs =-12v, v ds =0v -200 na on characteristics static drain-source on-state resistance (note) r ds(on) v gs =4.5v, i d =15a 6.0 8.0 m ? v gs =2.8v, i d =12a 12 30 m ? gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 0.6 1.9 v dynamic parameters input capacitance c iss v gs =0v, v ds =6.0v, f=1.0mhz 2550 pf output capacitance c oss 2190 pf reverse transfer capacitance c rss 450 pf switching parameters total gate charge q g i d =12a, v ds =10v, v gs =4.5v 26 40 nc gate to source charge q gs 4.6 nc gate to drain ("miller") charge q gd 11 nc output gate charge q oss v ds =5.0v, v gs =0v 17 nc turn-on delay time t d ( on ) v dd =6.0v, i d =12a, r g =1.8 ? v gs =4.5v (note) 11 ns rise time t r 29 ns turn-off delay time t d ( off ) 19 ns fall time t f 8.3 ns
UF7476 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-a70.b ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit source- drain diode ratings and characteristics maximum body diode continuous source current i s mosfet symbol showing the integral reverse p-n junction diode. 2.5 a maximum body diode pulsed current (note 1) i sm 120 a drain-source diode forward voltage (note) v sd t j =25c, i s =12a, v gs =0v 0.87 1.2 v t j =125c, i s =12a, v gs =0v 0.73 v body diode reverse recovery time t rr t j =25c, i f =12a, v r =12v, di/dt=100a/s (note) 55 82 ns body diode reverse recovery charge q rr 59 89 nc body diode reverse recovery time t rr t j =125c, i f =12a, v r =12v, di/dt=100a/s (note) 54 81 ns body diode reverse recovery charge q rr 60 90 nc notes: pulse width 300s, duty cycle 2%
UF7476 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-a70.b ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time unclamped inductive switching waveforms
UF7476 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-a70.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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